Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

Michael Foxe, Penn State University
Gabriel Lopez, Birck Nanotechnology Center, Purdue University
Isaac Childres, Birck Nanotechnology Center, Purdue University
Romaneh Jalilian, Birck Nanotechnology Center, Purdue University
Amol Patil, Purdue University
Caleb Roecker, Purdue University
John Boguski, Purdue University
Igor Jovanovic, Penn State University
Yong P. Chen, Birck Nanotechnology Center, Purdue University

Abstract

The use of a graphene field-effect transistors (GFETs) to detect radiation is proposed and analyzed. The detection mechanism used in the proposed detector architecture is based on the high sensitivity of graphene to the local change of electric field that can result from the interaction of radiation with a gated undoped semiconductor absorber (substrate) in a GFET. We have modeled a GFET-based radiation detector, and discussed its anticipated performance and potential advantages compared to conventional detector architectures.

Discipline(s)

Nanoscience and Nanotechnology