Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices

Baratunde A. Cola, Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University
Xianfan Xu, Birck Nanotechnology Center, School of Materials Engineering, Purdue University
Timothy Fisher, Birck Nanotechnology Center, Purdue University
Michael A. Capano, Birck Nanotechnology Center, Purdue University
Placidus B. Amama, Birck Nanotechnology Center, Purdue University

Date of this Version

July 2008

Citation

Nanoscale and Microscale Thermophysical Engineering, 12: 228–237, 2008

This document has been peer-reviewed.

 

Abstract

Multiwalled carbon nanotube (MWCNT) arrays have been directly synthesized from templated Fe2O3 nanoparticles on the C-face of 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD), and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69-345 kPa as well as the thermal resistances of SiC-MWCNT-Ag interfaces up to 250 degrees C (at 69 kPa) have been measured using a photoacoustic technique. The SiC-MWCNT-Ag interfaces with MWCNTs grown on the C-face of SiC achieved thermal resistances less than 10 mm(2) K/W, which is lower than the resistances of MWCNT interfaces grown using the same catalysis and growth methods on the Si-face of SiC and Ti-coated SiC. The thermal resistances of the SiC-MWCNT-Ag interfaces exhibit weak temperature dependence in the measured range, indicating that the interfaces are suitable for high-temperature power electronics applications.

 

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