Graphene segregated on Ni surfaces and transferred to insulators

Qingkai Yu, Univ Houston, Dept Elect & Comp Engn, Ctr Adv Mat
Jie Lian, Rensselaer Polytech Inst, Dept Mech & Aerosp Engn
Sujitra Siriponglert, Univ Houston, Dept Elect & Comp Engn, Ctr Adv Mat
Hao Li, Univ Missouri, Dept Mech & Aerosp Engn
Yong P. Chen, Birck Nanotechnology Center, Purdue University
Shin-Shem Pei, Univ Houston, Dept Elect & Comp Engn, Ctr Adv Mat

Date of this Version

September 2008



This document has been peer-reviewed.



We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality. (C) 2008 American Institute of Physics.