Birck Poster Sessions Copyright (c) 2013 Purdue University All rights reserved. http://docs.lib.purdue.edu/nanoposter Recent documents in Birck Poster Sessions en-us Fri, 15 Feb 2013 09:10:36 PST 3600 Quantum Teleportation in One-dimensional Quantum Dots http://docs.lib.purdue.edu/nanoposter/27 http://docs.lib.purdue.edu/nanoposter/27 Tue, 18 Nov 2008 06:47:47 PST The dream of teleportation is to be able to travel by simply reappearing at some distant location. It might appear that one could scan the object and send the information so that the object can be reconstructed at the destination. In conventional facsimile transmission an original object is scanned to extract partial information about it. The scanned information is sent to the receiving station, where it is used to produce an approximate copy of the original object. The original remains intact after the scanning process. By contrast, in quantum teleportation, the uncertainty principle forbids any scanning process from extracting all the information in a quantum state. Charles H. Bennett and his coworkers showed that a quantum state can be teleported provides one does not know that state using a celebrated and paradoxical feature of quantum mechanics known as the Einstein- Podolsky-Rosen (EPR) effect. In brief, they found a way to scan out part of the information from an object A, which one wishes to teleport, while causing the remaining, part of the information to pass, via the EPR effect. Two objects B and C form an entangled pair, object C is taken to the sending station, while object B is taken to the receiving station. At the sending station object C is scanned together with the original object A, yielding some information and totally disrupting the state of A and C. The scanned information is sent to the receiving station, where it is used to select one of several treatments to be applied to object B, thereby putting B into an exact replica of the former state of A.

]]> Hefeng Wang et al. Probing the State of Water on the Surface of Pharmaceutical Salts by X-ray Photoelectron Spectroscopy http://docs.lib.purdue.edu/nanoposter/26 http://docs.lib.purdue.edu/nanoposter/26 Wed, 23 Apr 2008 08:02:20 PDT •The results with both trifluoperazine di-HCl and clonidine HCl provide strong evidence for dissociative adsorption of water on organic hydrochloride salts. •This strongly bound water may act as nuclei for further moisture uptake and cause stability problems for moisture-labile salts. •Future work will investigate: • Role of surface chemistry and defect density of various faces of clonidine HCl single crystals on the extent of dissociation • Comparison between clonidine HCl, clonidine HBr and clonidine free base

]]> Pete Guerrieri et al. Carbon Nanotube Array Electrical Interfaces for Thermoelectrics http://docs.lib.purdue.edu/nanoposter/25 http://docs.lib.purdue.edu/nanoposter/25 Wed, 23 Apr 2008 07:55:36 PDT Thermomechanical compliance, electrical and thermal contact resistances in miniaturized thermoelectric devices Miniaturized thermoelectric (TE) heat-pumps seem to be the ideal candidate for localized heat-flux dissipation challenges in microelectronics . It is unfortunate that despite of sustained research in this field, the realization of widespread TE applications in society still remains elusive. Here we report a new strategy to enhance the performance and reliability of TE devices by integrating TE films with carbon nanotube (CNT) arrays by an economical electrodeposition process. We demonstrate significant improvements in the thermomechanical compliance (increase in &#;Tmax > 200K), and the electrical and thermal contact conductance of the CNT/TE integrated contact over the usual electrodeposited metal-interconnect/TE (M/TE) contacts. Improvements in thermomechanical compliance, and contact conductance at the M/CNT/TE contact will lead to development of various highly efficient and reliable applications like microelectronic cooling, waste heat recovery, precise temperature control and measurement, thermochemistry, etc.

]]> Himanshu Mishra et al. Gold Nanorod-Mediated Photothermolysis Induces Apoptosis to Macrophages via Damage of Mitochondria http://docs.lib.purdue.edu/nanoposter/23 http://docs.lib.purdue.edu/nanoposter/23 Thu, 17 Apr 2008 06:58:15 PDT Alterations in macrophage functions contribute to a variety of autoimmune and inflammatory diseases. Diagnosis and eradication of activated macrophages is becoming a valid pharmaceutical target. In this work, gold nanorods conjugated with arginine-rich peptides were applied as theragonosis agents to detect activated macrophages via two-photon luminescence (TPL) and subsequent eradicate through optical hyperthermia. Functionalized gold nanorods could be selectively internalized by activated macrophages in live animals 0.5 h after intraperitoneal (i.p.) injection. Apoptosis of macrophage was induced under proper irradiation conditions to reduce secondary inflammation, through mitochondria-dependent pathway.

]]> Ling Tong et al. AquaCore: A General-Purpose Programmable Lab-on-a-Chip http://docs.lib.purdue.edu/nanoposter/22 http://docs.lib.purdue.edu/nanoposter/22 Thu, 17 Apr 2008 06:55:36 PDT The AquaCore architecture provides a general-purpose design capable of executing a large class of assays, where the actual assay steps are described in a sequence of steps, called “fluidic instructions”. By providing a general-purpose programmable architecture and AIS, we enable µTAS developers to write their custom assays to run on this chip. We believe that the transition from LoCs to PLoCs is a paradigm shift in microfluidics, analogous to that in electronics from calculators to programmable computers. This shift should enable the ubiquitous use of PLoCs and should allow µTAS users to focus on assay design rather than device design, thus boosting productivity.

]]> Ahmed M. Amin et al. Water-soluble iron oxide nanoparticles for nanomedicine http://docs.lib.purdue.edu/nanoposter/21 http://docs.lib.purdue.edu/nanoposter/21 Tue, 15 Apr 2008 10:53:52 PDT Monodisperse iron oxide nanoparticles (MION) are easily synthesized in organic solvents for industrial applications. However, biological applications require that the particles by readily dispersed in aqueous solutions. To improve their dispersion in aqueous solution, MION particles can be conjugated to water soluble polymers. These water soluble particles can then be used for nanomedicine, which utilizes nanometer scale constructs to treat diseases at the cellular level. Here we report the synthesis of a monodisperse iron oxide nanoparticle construct for breast cancer applications.

]]> Christy L. Cooper et al. DNA-Associated Single-walled Carbon Nanotubes as a Platform for Drug Delivery http://docs.lib.purdue.edu/nanoposter/20 http://docs.lib.purdue.edu/nanoposter/20 Tue, 15 Apr 2008 10:50:45 PDT Poster from Birck Nanotechnology Center's 2008 Research Review

]]> Bridget D. Hines et al. Characterization and Modeling of Trap Generation: A Primer on “Why & How the Transistors Degrade” http://docs.lib.purdue.edu/nanoposter/19 http://docs.lib.purdue.edu/nanoposter/19 Fri, 11 Apr 2008 05:58:26 PDT Summary:

Traps at interfaces and bulks of oxides has always been a problem.

Efforts have been made to interpret trapping phenomena using essential, but simple, physics.

Modeling of these irreversible phenomena has innovative technological implications: (1) Optimization between off-state power and reliability (2) Degradation-free transistor

]]> Ahmad Ehteshamul Islam et al. Quantum Simulation: Solving Schrödinger Equation on a Quantum Computer http://docs.lib.purdue.edu/nanoposter/18 http://docs.lib.purdue.edu/nanoposter/18 Thu, 10 Apr 2008 08:20:47 PDT Using the MCSCF wave function as the initial guess can improve the success probability dramatically, even just a few CSFs.

The method can be generalized to general MRCI scheme and the entire potential energy surface can be explored for ground state and excited states.

Instead of starting from a single element as in the HF wave function, MCSCF method starts from a small matrix. This makes the evolution safer and faster.

The idea can be generalized to Finite element method and any numerical method.

]]> Hefeng Wang et al. Finite Size Scaling and Stability of Matter in Super-intense Laser Fields http://docs.lib.purdue.edu/nanoposter/17 http://docs.lib.purdue.edu/nanoposter/17 Wed, 09 Apr 2008 14:35:35 PDT The existence of phase transitions is associated with singularities of the free energy. These singularities occur only in the thermodynamic limit. In the present approach the finite size corresponds not to the spatial dimension, as in statistics, but to the number of elements in a complete basis set used to expand the exact eigenfunction of a given Hamiltonian.

]]> Qi Wei et al. Fully transparent thin-film transistors based on aligned single-walled carbon nanotube arrays http://docs.lib.purdue.edu/nanoposter/16 http://docs.lib.purdue.edu/nanoposter/16 Wed, 09 Apr 2008 08:44:22 PDT The work describes the first demonstration of fully transparent thin-film-transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWNT) arrays with indium tin oxide (ITO) source/drain/gate electrodes. The fully transparent SWNT-TFTs could be attractive candidates for future flexible/ or transparent electronics. The transistors provide suitable current levels to drive OLED pixels (e.g. for high resolution displays), and operated at relatively low gate biases (~2V). The use of aligned SWNTs allows scaling of the current levels with device width, which will be important for future circuit approaches. We propose several new approaches to overcome the limitations of conventional carbon nanotube transistors. 1. Difficulty in the separation of semiconducting and metallic SWNTs ~ Electrical burning at two terminals 2. Alignment of the nanotubes to device in a controlled fashion ~ Aligned SWNTs array on quartz substrate 3. High yield devices isolated from their environment ~ Atomic layer deposition (ALD) passivation

]]> Sunkook Kim et al. Non-Toxic Liquid-Metal 2-100 GHz MEMS Switch http://docs.lib.purdue.edu/nanoposter/15 http://docs.lib.purdue.edu/nanoposter/15 Tue, 02 Oct 2007 19:38:48 PDT Chung-Hao Chen et al. Electrostatic Liquid-Metal Capacitive Shunt MEMS Switch http://docs.lib.purdue.edu/nanoposter/14 http://docs.lib.purdue.edu/nanoposter/14 Tue, 02 Oct 2007 19:37:31 PDT Chung-Hao Chen et al. Heat Transfer and Fluid Transport in Microchannels http://docs.lib.purdue.edu/nanoposter/13 http://docs.lib.purdue.edu/nanoposter/13 Tue, 26 Jun 2007 09:39:20 PDT Dong Liu et al. XPS application for biologically related objects http://docs.lib.purdue.edu/nanoposter/12 http://docs.lib.purdue.edu/nanoposter/12 Fri, 25 May 2007 06:03:18 PDT Dmitry Zemlyanov High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric http://docs.lib.purdue.edu/nanoposter/11 http://docs.lib.purdue.edu/nanoposter/11 Tue, 22 May 2007 09:56:04 PDT The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry suggests that ALD high-k dielectrics developed for silicon may pave the way for novel channel materials in future CMOS integrated circuits. In this work, high performance inversion-type enhancement mode InGaAs MOSFET with ex situ ALD gate dielectric and 0.5 micron gate length is demonstrated for the first time with maximum drain current of 367mA/mm and extrinsic transconductance of 130mS/mm.

]]> Y. Xuan et al. Inversion-type enhancement-mode InP MOSFETs with ALD, AI2O3, HfO2 and HfAIO nanolaminates as high-k gate dielectrics http://docs.lib.purdue.edu/nanoposter/10 http://docs.lib.purdue.edu/nanoposter/10 Tue, 22 May 2007 09:47:54 PDT As the Moore's Law push device scaling to a fundamental physical limit, alternatives have been attempted to explore tha "Plenty of Room at the Bottom." Chip giant Intel and IBM announced the high-k dielectric with metal gate technology on their 45-nm node generation using ALD— "The implementation of high-k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s" — by Gordon Moore

This somehow gives people the motivation to pursue the similar concept: ALD high-k dielectric on III-V compound semiconductor MOSFETs, which have higher mobility than Silicon, probably a suitable candidate of further generations.

]]> Y. Q. Wu et al. Electrical Actuation of Droplets for Microelectronics Cooling http://docs.lib.purdue.edu/nanoposter/9 http://docs.lib.purdue.edu/nanoposter/9 Tue, 22 May 2007 09:27:52 PDT Develop technologies enabling electrical actuation and control of droplets for providing chip-integrated thermal management solutions

]]> Vaibhav Bahadur et al. Carbon Nanotube Thermal Interfaces http://docs.lib.purdue.edu/nanoposter/8 http://docs.lib.purdue.edu/nanoposter/8 Tue, 22 May 2007 09:03:24 PDT Baratunde A. Cola et al. Templated Vertical Carbon Nanotube Transistors http://docs.lib.purdue.edu/nanoposter/7 http://docs.lib.purdue.edu/nanoposter/7 Mon, 21 May 2007 12:18:11 PDT Single-walled carbon nanotubes (CNTs) are a potential channel material for the next generation field-effect transistors (FETs). With properties such as quasi-ballistic transport and high thermal conductivity, CNTFETs have the ability to outperform Si MOSFETs. To date, all reported CNTFETs have been created in a planar geometry, with the CNT horizontal to the supporting substrate. While planar CNTFETs have provided an important plaform for exploring device properties, they have yet to overcome the impending issues related to large-scale device fabrication. Obstracles such as precise placement, addressability, and high-density integration of CNTFETs can be overcome using a vertical device geometry. In the present work, vertical CNTs (v-CNTs) are synthesized within porous alumina templates and contacted in situ with vertical Pd nanowries. Semi-vertical CNTFETs are subjsequently fabricated to provide a comparison of the vertical nanowire contact to a more conventional planar content. Futher fabrication work is also presented, displyaing our progress towards fabricating addressable arrays of v-CNTFETs.

]]> Aaron D. Franklin et al.