Traps at interfaces and bulks of oxides has always been a problem.

Efforts have been made to interpret trapping phenomena using essential, but simple, physics.

Modeling of these irreversible phenomena has innovative technological implications: (1) Optimization between off-state power and reliability (2) Degradation-free transistor

]]>The method can be generalized to general MRCI scheme and the entire potential energy surface can be explored for ground state and excited states.

Instead of starting from a single element as in the HF wave function, MCSCF method starts from a small matrix. This makes the evolution safer and faster.

The idea can be generalized to Finite element method and any numerical method.

]]>This somehow gives people the motivation to pursue the similar concept: ALD high-k dielectric on III-V compound semiconductor MOSFETs, which have higher mobility than Silicon, probably a suitable candidate of further generations.

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