Title
Characterization and Modeling of Trap Generation: A Primer on “Why & How the Transistors Degrade”
Abstract
Summary:
Traps at interfaces and bulks of oxides has always been a problem.
Efforts have been made to interpret trapping phenomena using essential, but simple, physics.
Modeling of these irreversible phenomena has innovative technological implications: (1) Optimization between off-state power and reliability (2) Degradation-free transistor
Date of this Version
April 2008
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Comments
Poster for 2008 Research Review