The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry suggests that ALD high-k dielectrics developed for silicon may pave the way for novel channel materials in future CMOS integrated circuits. In this work, high performance inversion-type enhancement mode InGaAs MOSFET with ex situ ALD gate dielectric and 0.5 micron gate length is demonstrated for the first time with maximum drain current of 367mA/mm and extrinsic transconductance of 130mS/mm.
atomic layer deposition
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