Abstract

We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems.

Keywords

gate delay; MOSFET; nanowire/tube; one-dimensional (1-D); quantum capacitance; scaling

Date of this Version

4-2008