Abstract
In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance.
Keywords
carbon nanotube (CN); field-effect transistor (FET); gate-all-around (GAA), ATOMIC LAYER DEPOSITION; FUNCTIONALIZATION
Date of this Version
2-2008