Electrical transport and 1/f noise in semiconducting carbon nanotubes

Yu-Ming Lin, IBM Corp
Joerg Appenzeller, Birck Nanotechnology Center, Purdue University
Zhihong Chen, IBM Corp
Phaedon Avouris, IBM Corp

Document Type Article


We investigate electrical transport,and noise m semiconducting carbon nanotubes. By studying carbon nanotube devices with various,diameters, and contact metals, we show that the,ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal.