Abstract

The low frequency (1f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge's constants (H) are 4.510 -2 at Vds=0.1 V and 5.110-2 at V ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

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Date of this Version

January 2008

DOI

http://dx.doi.org/10.1063/1.2947586

Published in:

Applied Physics Letters 92,24 (2008)

 
 

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