Published in:

IEEE Electron Device Letters 29,9 (2008) 1037-9;

Comments

Publisher retains content copyright.

Abstract

Nanonet thin-film transistors (NN-TFTs) based on random or aligned networks of single-wall carbon nanotubes are often regarded as a promising high-performance alternative to amorphous-Si technology for various macroelectronics applications involving sensors and displays. The comparison of NN-TFTs with other competing technologies such as organic, a-Si, and p-Si TFTs, however, has proved difficult as the mobility of these devices (counterintuitively) depends on a host of geometrical parameters such as tube density D, tube length LS, channel length LC, tube-tube contact Cij, etc. In this letter, we redefine the mobility for NN-TFTs by generalizing the classical definition from a bottom-up perspective based on a stick percolation model. This new definition would allow a direct comparison of NN-TFT mobilities across different laboratories and with other competing technologies. We also suggest a simple experimental measure of the critical tube-tube contact Cij parameter to allow design of optimized transistors.

Keywords

carbon nanotubes, nanoelectronics, nanotube devices, percolation, thin film transistors

Date of this Version

January 2008

DOI

http://dx.doi.org/10.1109/LED.2008.2001259

 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.