Abstract
We reported the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k AI2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 A/m and transconductances of 538-705 S/m. The 100-nm device has a drain current of 801 A/m and a transconductance of 940 Sm. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.
Keywords
Atoms, Drain current, Electric potential, Gallium, Gate dielectrics, Gates (transistor), MOSFET devices, Semiconducting indium, Transconductance
Date of this Version
January 2009
DOI
http://dx.doi.org/10.1109/LED.2009.2022346
Published in:
IEEE Electron Device Letters 30,7 (2009) 700-702;
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