A study of semiconducting glass micro-strip gas chambers
Abstract
The properties of Micro Strip Gas Chambers, built on semiconducting glasses, S8900 and, for the first time, Moscow glass with bulk resistivity $\rho=3\cdot10\sp{12}\ \Omega{\cdot}$cm, are presented. The radiation hardness (aging) of the detectors in an argon dimethyl ether gas mixture is measured. Initially, a gain drop of, at best, 12% after an accumulated charge of 1 mC/cm, is detected. The aging rate is found to be dependent on the flow rate of the gas. After modifications to the gas system, a gain drop of 6%, after an accumulated charge of 45 mC/cm, is measured. This is equivalent to 4.5 years of operation at CERN's Large Hadron Collider, a next generation high luminosity accelerator. The construction of the gas system is described in detail. Count rate and gain modulations are measured in large pitch MSGCs. The magnitude of the gain modulation is found to be correlated to the applied anode and drift voltage. However, the magnitude of the count rate modulation does not depend on the applied voltages. The performance of glass and sapphire substrate MSGCs with chromium and molybdenum electrodes, overcoated with carbon, hydrogenated amorphous silicon, and semiconducting glass layers is reported.
Degree
Ph.D.
Advisors
Shipsey, Purdue University.
Subject Area
Particle physics|Radiation
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