Development of Ultra Radiation-Hard Silicon Sensors for High-Luminosity Upgrade of LHC
Abstract
The upcoming upgrade of the LHC accelerator, denoted as High Luminosity LHC (HL-LHC), will increase the instantaneous luminosity of the machine from the nominal value of 1 × 1034 cm–2s –1 to 5 × 1034 cm–2s –1. The integrated luminosity delivered to the CMS detector will increase tenfold from ∼ 300 fb–1 to ∼ 3000 fb–1 in 10-12 years of planned HL-LHC operation. The pixel detector is the innermost tracking device inside CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost tracking layers of the CMS pixel detector will be exposed to particle fluences of ∼ 1016 neq /cm2. This thesis focuses on the development and evaluation of ultra-radiation hard silicon detectors required for the CMS pixel detector. Several novel sensor technologies, such as thin planar and 3D sensors, have been studied as a possible replacement for the current n-on-n planar technology. The performance of 3D and thin sensors have been evaluated with detailed laboratory and beam test measurements before and after heavy irradiation. Parylene-N coating is proposed as an edge passivation mechanism for single sided sensors, and is shown to be radiation hard up to a fluence of 9 × 1015 neq/cm2. Measurement of various test structures for studying the bulk and surface properties of 3D sensors before and after proton, gamma and neutron irradiations are also presented.
Degree
Ph.D.
Advisors
MANFRA, Purdue University.
Subject Area
Electrical engineering|Physics
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