Production of CMS FPIX detector modules and development of novel radiation-hard silicon sensors for future upgrades of the LHC

Ozhan Koybasi, Purdue University

Abstract

The Compact Muon Solenoid (CMS) experiment currently taking data at the Large Hadron Collider (LHC) has the largest ever built all-silicon tracking system with a pixel detector as the innermost component. The pixel detector consists of three 53 cm long barrel layers (BPIX) at radial distances of r= 4.4, 7.3, and 10.2 cm from the interaction point complemented with two end-cap disks (FPIX) on each side of the interaction region covering radial distances from ∼6 cm to 15 cm. The development, production, and qualification of the silicon detector modules used for the construction of the CMS FPIX disks are described. The plan for the luminosity upgrade of the LHC foresees a phase I upgrade increasing the peak luminosity from 1034 cm.2s.1 (original design figure) to 2-3 × 1034 cm-2s-1 after about 5 years of operation, followed by phase II upgrade eventually reaching a value of 5x1034 cm-2 s-1 (the so-called "High Luminosity-LHC" or "HL-LHC"). At Phase I, the CMS pixel detector will be replaced by a new detector, which will have an additional fourth barrel layer at r=16 cm and two extra forward disks on each side with radial coverage of all disks increased to r =4.5-16.1 cm. Although the present non- n silicon pixel sensor technology meets the performance requirements, it is possible to achieve the same performance with the relatively new n-on-p technology, which would reduce the cost by ∼50%. The phase II upgrade, on the other hand, faces a challenge for the detector technology to be adopted for the innermost tracking layers (at r ∼ 4 cm) where the radiation fluence is expected to reach values close to 1016 neq /cm2, since the conventional planar silicon sensors are functional only up to a fluence of ∼1015 neq/cm2. The 3D silicon sensor technology is regarded as one of the most promising solutions for the radiation tolerance requirements of innermost pixel tracking layers at the HL-LHC. Improvements to the current n-on-n silicon pixel sensor design; and development of n-on-p planar silicon and of 3D silicon sensor technologies are presented.

Degree

Ph.D.

Advisors

Bortoletto, Purdue University.

Subject Area

Solid State Physics|Particle physics

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