The future of silicon carbide high power electronic switches
Abstract
Silicon carbide (SiC) is a wide bandgap material with properties that make it an attractive alternative to silicon for high power semiconductor devices. In this work, design, optimization, and fabrication of high voltage (8-20 kV) SiC switches is explored. Thyristors are fabricated on epilayer structures theoretically capable of blocking 8 and 20 kV. The on-state performance is measured and analyzed with some suggestions on future advances in material quality of silicon carbide. A simple analytical model of thyristor on-state current-voltage relationship is also presented. An in-depth simulation study is performed on SiC insulated gate bipolar transistors (IGBTs) with blocking voltages between 10 and 20 kV, looking at both on-state and switching performance. Methodologies for optimization of the IGBT design are outlined via simulation. A simulation comparison study is also performed between SiC IGBTs and MOSFETs (metal-oxide-semiconductor field effect transistors) in the 10 and 20 kV range using a novel comparison methodology and figure of merit.
Degree
Ph.D.
Advisors
Cooper, Purdue University.
Subject Area
Electrical engineering
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