Computational and experimental study of transport in advanced silicon devices
Abstract
In this thesis, we investigate electron transport in advanced silicon devices by focusing on two important classes of devices: the bipolar junction transistor (BJT) and the silicon MOSFET. In regards to the BJT, we will compare and assess solutions of a physically detailed microscopic model to the standard Drift-Diffusion model. In so doing, we will explain why the Drift-Diffusion model has been prevalent and speculate about its prospect in the future. In connection with the MOSFET, we present a new theory, which calculates the upper-limit performance for a given CMOS technology. Using this theory, we assess the performance of a present-day technology by using experimental data and make predictions about the performance of future CMOS technologies as specified in the Roadmap for Semiconductor Industry. Finally, we will speculate on whether or not CMOS technology will be viable in the future.
Degree
Ph.D.
Advisors
Lundstrom, Purdue University.
Subject Area
Electrical engineering
Off-Campus Purdue Users:
To access this dissertation, please log in to our
proxy server.