Graphene synthesis on 4H-silicon carbide(0001) and characterization by scanning tunneling microscopy
Abstract
In this work, graphene films were synthesized by the thermal decomposition of 4H-SiC(0001¯) and a systematic characterization of prominent surface defects was performed. The origins of several distinct growth features were identified in order to provide the insight needed to optimize current growth conditions. In addition, a procedure was developed to fabricate atomically smooth step-free SiC surfaces on patterned 4H-SiC(0001) wafers for novel graphene growth investigations.
Degree
M.S.E.C.E.
Advisors
Capano, Purdue University.
Subject Area
Electrical engineering
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