Low-Power ASIC Design with Integrated Multiple Sensor System
Abstract
A novel method of power management and sequential monitoring of several sensors is proposed in this work. Application specific integrated circuits (ASICs) consisting of analog and digital sub-systems forming a system on chip (SoC) has been designed using complementary metal-oxide-semiconductor (CMOS) technology. The analog sub-system comprises the sensor-drivers that convert the input voltage variations to output pulse-frequency. The digital sub-system includes the system management unit (SMU), counter, and shift register modules. This performs the power-usage-management, sensor-sequence-control, and output-data-frame-generation functions. The SMU is the key unit within the digital sub-system is that enables or disables a sensor. It captures the pulse waves from a sensor for 3 clocks out of a 16-clock cycle, and transmits the signal to the counter modules. As a result, the analog sub-system is at on-state for only 3/16th fraction (18 %) of the time, leading to reduced power consumption. Three cycles is an optimal number selected for the presented design as the system is unstable with less than 3 cycles and higher clock cycles result in increased power consumption. However, the system can achieve both higher sensitivity and better stability with increased on-state clock cycles. A current-starved-ring-oscillator generates pulse waves that depend on the sensor input parameter. By counting the number of pulses of a sensor-driver in one clock cycle, a sensor input parameter is converted to digital. The digital sub-system constructs a 16-bit frame consisting of 8-bit sensor data, start and stop bits, and a parity bit. Ring oscillators that drive capacitance and resistance-based sensors use an arrangement of delay elements with two levels of control voltages. A bias unit which provides these two levels of control voltages consists of CMOS cascade current mirror to maximize voltage swing for control voltage level swings which give the oscillator wider tuning range and lower temperature induced variations. The ring oscillator was simulated separately for 250 nm and 180 nm CMOS technologies. The simulation results show that when the input voltage of the oscillator is changed by 1 V, the output frequency changes linearly by 440 MHz for 180 nm technology and 206 MHz for 250 nm technology. In a separate design, a temperature sensitive ring oscillator with symmetrical load and temperature dependent input voltage was implemented. When the temperature in the simulation model was varied from -50°C to 100°C the oscillator output frequency reduced by 510 MHz for the 250 nm and by 810 MHz for 180 nm CMOS technologies, respectively. The presented system does not include memory unit, thus, the captured sensor data has to be instantaneously transmitted to a remote station, e.g. end user interface. This may result in a loss of sensor data in an event of loss of communication link with the remote station. In addition, the presented design does not include transmitter and receiver modules, and thus necessitates the use of separate modules for the transfer of the data.
Degree
M.S.E.C.E.
Advisors
Varahramyan, Purdue University.
Subject Area
Electrical engineering
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